CAS number : 1303-11-3
Molecular weight :189.74
Molecular formula/chemical symbol :InAs
Description :
Indium arsenide is by indium and arsenic Ⅲ consisting of a V compound semiconductor materials. The normal temperature solid silver, with sphalerite crystal structure, lattice constant for o. 6058 nm, density of 5.66 g/cm (solid), 5.90 g/cm (melting point liquid).
USES :
Manufacturing hall device and magnetic resistance devices ideal material.Used for n type doping agent, in order to improve the longitudinal carrier concentration distribution uniformity.The emission wavelength of InAs 3.34 u m, In InAs substrate on growth of the lattice mismatch In - GaAsSb, InAsPSb and InAsSb multiple epitaxial material that can be made 2 ~ 4 μ m band optical fiber communication of laser and detector.
Keyword:Nanometer materials
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