A U.S.-based materials company has achieved industrial-scale production of phase-pure hexagonal gallium nitride (h-GaN) submicron powder, with particle sizes consistently maintained at 300–500?nm and phase purity meeting semiconductor-grade requirements—marking a transition of high-end GaN powder from a laboratory-scale specialty material to industrial production.
Recently, U.S.-based materials company Mivium announced that it had achieved industrial-scale production of phase-pure, hexagonal wurtzite gallium nitride (h-GaN) submicron powder using its proprietary process. The particle size is consistently controlled within the range of 300–500?nm, while the phase purity and crystal morphology meet semiconductor-grade standards. This achievement overcomes the long-standing reliance on small-batch, laboratory-scale production of high-end GaN powder.
As the third-generation semiconductor industry continues to expand rapidly, the availability of gallium nitride powder has become a key bottleneck limiting cost reduction and production scale-up in downstream industries. The main challenges include persistently high ceramic raw material costs, fluctuations in device yields caused by phase impurities in the powder, and batch-to-batch variations in raw materials that make it difficult to standardize mass-production processes.
Drawing on its R&D capabilities in specialty electronic metal compounds and its custom synthesis platform, Guangxi Titan New Material Technology Co., Ltd. has introduced high-purity, semiconductor-grade gallium nitride (GaN) powder in nano- to submicron-size grades. The product supports customization of crystal phase, particle size, and purity, while maintaining laboratory-grade quality and offering the capability to scale up production.
A controlled synthesis process is used to produce phase-pure hexagonal wurtzite-tructure GaN, with oxygen, carbon, and metallic impurities strictly controlled to prevent impurity-induced energy levels from compromising material performance.
Each batch is accompanied by a comprehensive Certificate of Analysis (COA), with crystal phase, particle size, and impurity data documented for verification and full traceability.
Particle sizes can be customized from the nanoscale to the submicron range, with uniform particle-size distributions and controllable morphology, making the powder suitable for various processing methods, including powder sintering, tape casting, thin-film coating, and slurry preparation.
Standardized synthesis and post-treatment procedures are implemented throughout the production process, with strict control over synthesis temperature, atmosphere, and other process parameters. This minimizes batch-to-batch variations and helps address issues such as warping during sintering, inconsistent material performance, and unstable product yields.
Products are available in various forms, including powders and dispersions. Dispersibility and solvent systems can be tailored to specific production-line requirements, reducing on-site adjustment costs and enabling direct integration into existing processes.
For power semiconductor packaging, the powder can be used as a functional additive in aluminum nitride (AlN) and silicon nitride (Si3N4) ceramic substrates, or as a raw material for the direct fabrication of GaN ceramic substrates. By leveraging the high thermal conductivity and electrical insulation of ceramic substrates, these materials can help improve heat dissipation and high-temperature stability. They are suitable for a range of power modules and applications, including new-energy vehicles, photovoltaic inverters, and AI servers.
The powder can be used as a raw material for the epitaxial growth of light-emitting diodes (LEDs) and laser diodes, or as a functional powder for thin-film coating. Its high phase purity and excellent optical properties can help improve luminous efficiency, wavelength uniformity, and service life.
The powder can be used to produce structural ceramics with high-temperature resistance, corrosion resistance, and excellent wear resistance, as well as electronic ceramic components with high-frequency performance and high breakdown strength. These materials are suitable for use in extreme environments and demanding high-frequency operating conditions.
We support small-batch customization and provide samples tailored to specific specifications to meet the needs of new-device development at universities, research institutes, and corporate R&D centers, helping accelerate the transition from laboratory validation to pilot-scale testing.
We specialize in the R&D and production of high-purity, electronic-grade metal compounds. From refining high-purity gallium feedstock and carrying out controlled nitridation to post-treatment purification and final product testing, we have established a standardized quality management system covering the entire production chain.
We provide complimentary material selection consultations and support the delivery of small-quantity samples accompanied by testing documentation and application guidance. Our technical team follows up on sample evaluation feedback and assists customers in optimizing process parameters.
With a presence in key industrial centers such as Nanning and Shanghai, overseas service bases, and an online B2B trading platform, we support local delivery and global distribution while maintaining reliable lead times.
Note: Product specifications and testing items are subject to the COA accompanying the actual products and the technical agreement between the parties. Particle sizes ranging from the nanoscale to the submicron range can be customized to meet customer process requirements.
As the third-generation semiconductor and advanced ceramics industries continue to evolve, gallium nitride powder is poised to capture growing market opportunities. Ensuring a stable and reliable supply of powder materials to overcome critical supply-chain bottlenecks and keep core materials in step with advances in device technology is a shared priority in this new phase of industrial upgrading.
